InSb films for magnetic sensors

InSb films are prepared by a source-temperature-programmed evaporation method and hot-wire recrystalhzatlon lnethod for Hail elements and ma~etor~~stan~ (MR) elements, respecttvely, to reduce nnperfectJons of the crystal structure, and their crystakne and electrical propertles are studied An optimum source-temperature pmgramme 1s mvestlgated and the films thus prepared are used for Hall elements An X-ray analysnx of the film shows a high degree of stoichlometly Magnetreally sensltwe InSb films have been prepared by hot-wire r~~stalli~tlon A rim-temperature MR value of AR/&= 155%m was obtamed at 1 T with a length to wrdth ratto (UW) =O 4 Samples have been prepared by sequential deposttton of In, InSb, and SJO onto unheated mtca substrates InSb has attracted much attentton and has been intensively studted for tts e~emely htgh electron mob&y at room temperature Therefore InSb IS the matenal best sutted for galvanomagnetrc apphcatlons, such as Hall eiements and magnetoresistance (MR) elements The sensmvity of a Hall element IS inversely proporttonal to rts thrckness However, fabrtcatron of very thm Hall elements from bulk crystal by mechamcal or chemtcal techniques IS rather d#icult An altemattve method for utrhzatlon of bulk crystal is the use of the thm-film techmque, provrded that the film retains the desrrable electneal characterrstrcs of the bulk matenal